标题: A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors
作者: You, Wei-Xiang
Su, Pin
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: D semiconductors;high-K gate dielectrics;molybdenum disulphide (MoS2);short-channel effects;subthreshold current model;transition metal dichalcogenide (TMD)
公开日期: 七月-2016
摘要: This brief presents a compact subthreshold model for short-channel monolayer transition metal dichalcogenide (TMD) field-effect transistors. In this model, the impact of fringe fields from the high-K gate dielectric is considered and incorporated into a new characteristic-length expression using a single model parameter. This model has been verified with 2-D numerical simulations for TMD devices with gate length down to 5.9 nm based on ITRS 2028 low-power technology node.
URI: http://dx.doi.org/10.1109/TED.2016.2564424
http://hdl.handle.net/11536/133899
ISSN: 0018-9383
DOI: 10.1109/TED.2016.2564424
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 63
Issue: 7
起始页: 2971
结束页: 2974
显示于类别:Articles