标题: | A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors |
作者: | You, Wei-Xiang Su, Pin 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | D semiconductors;high-K gate dielectrics;molybdenum disulphide (MoS2);short-channel effects;subthreshold current model;transition metal dichalcogenide (TMD) |
公开日期: | 七月-2016 |
摘要: | This brief presents a compact subthreshold model for short-channel monolayer transition metal dichalcogenide (TMD) field-effect transistors. In this model, the impact of fringe fields from the high-K gate dielectric is considered and incorporated into a new characteristic-length expression using a single model parameter. This model has been verified with 2-D numerical simulations for TMD devices with gate length down to 5.9 nm based on ITRS 2028 low-power technology node. |
URI: | http://dx.doi.org/10.1109/TED.2016.2564424 http://hdl.handle.net/11536/133899 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2016.2564424 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 63 |
Issue: | 7 |
起始页: | 2971 |
结束页: | 2974 |
显示于类别: | Articles |