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dc.contributor.authorAltolaguirre, Federico A.en_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2017-04-21T06:55:39Z-
dc.date.available2017-04-21T06:55:39Z-
dc.date.issued2016-08en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2016.2579170en_US
dc.identifier.urihttp://hdl.handle.net/11536/134121-
dc.description.abstractA new electrostatic discharge (ESD) protection device, called quad-silicon controlled rectifier (QSCR), is proposed and verified in a 0.25-mu m CMOS process. The QSCR is designed to be used as ESD protection between separated power domains. Since the QSCR embeds four SCRs between its four terminals, no extra ESD clamps are needed to protect the interface circuits between two separated power domains. Implementations with different circuit topologies were also analyzed to achieve a comprehensive ESD protection design for different applications. From the experimental results, the QSCR can withstand 8-kV HBM and 600-V MM ESD stresses with a silicon area of 75 mu m x 100 mu m.en_US
dc.language.isoen_USen_US
dc.subjectElectrostatic discharge (ESD)en_US
dc.subjectseparated power domainsen_US
dc.subjectsilicon controlled rectifier (SCR)en_US
dc.titleQuad-SCR Device for Cross-Domain ESD Protectionen_US
dc.identifier.doi10.1109/TED.2016.2579170en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume63en_US
dc.citation.issue8en_US
dc.citation.spage3177en_US
dc.citation.epage3184en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000380324600030en_US
Appears in Collections:Articles