MOS2 U-shape MOSFET with 10 nm Channel Length and Poly-Si Source/Drain Serving as Seed for Full Wafer CVD MOS2 Availability

Abstract

A U-shape MOS2 pMOSFET with 10nm channel and poly-Si source/drain is demonstrated. The fabrication process is simple. Because the Si S/D serves as the nucleation seed for CVD MOS2 deposition, thin MOS2 is well deposited in the channel region any where over the fully scale oxide coated Si wafer. This is a big step forward toward a low cost multi-layer stacked TMD IC technology.