標題: Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate Insulator
作者: Lin, Y. C.
Lin, J. C.
Lin, Y.
Wu, C. H.
Huang, Y. X.
Liu, S. C.
Hsu, H. T.
Hsieh, T. E.
Kakushima, K.
Iwai, H.
Chang, E. Y.
材料科學與工程學系
國際半導體學院
Department of Materials Science and Engineering
International College of Semiconductor Technology
公開日期: 2016
URI: http://hdl.handle.net/11536/134550
ISBN: 978-1-5090-1964-9
期刊: 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)
Appears in Collections:Conferences Paper