| 標題: | Statistical Device Simulation of Characteristic Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFETs Induced by Various Discrete Random Dopants |
| 作者: | Sung, Wen-Li Chang, Han-Tung Chen, Chieh-Yang Chao, Pei-Jung Li, Yiming 分子醫學與生物工程研究所 電機工程學系 電信工程研究所 Institute of Molecular Medicine and Bioengineering Department of Electrical and Computer Engineering Institute of Communications Engineering |
| 關鍵字: | Gate-all-around;Silicon nanowire MOSFET;Random dopant fluctuation;Modeling;Simulation |
| 公開日期: | 2016 |
| 摘要: | We study the impact of random dopant fluctuation (RDF) on electrical characteristics of 10-nm-gatehigh kappa/metal gate gate-all-around silicon nanowire MOSFET devices. To provide the best accuracy of device simulation, model parameters are validated by using full quantum mechanical simulation and calibrated with experimental results. Physical mechanism of RDs inside channel and penetration from the source/drain extensions into the channel is discussed. Electrical characteristic of the device is estimated with respect to different types of RDF. |
| URI: | http://hdl.handle.net/11536/134650 |
| ISBN: | 978-1-5090-1493-4 |
| 期刊: | 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) |
| 起始頁: | 951 |
| 結束頁: | 954 |
| Appears in Collections: | Conferences Paper |
- DC/AC/RF Characteristic Fluctuations Induced by Various Random Discrete Dopants of Gate-All-Around Silicon Nanowire n-MOSFETs / Sung, Wen-Li;Li, Yiming
- Timing and Power Fluctuations on Gate-All-Around Nanowire CMOS Circuit Induced by Various Sources of Random Discrete Dopants / Sung, Wen-Li;Chao, Pei-Jung;Li, Yiming
- Asymmetric Characteristic Fluctuation of Undoped Gate-All-Around Nanowire MOSFETs Induced by Random Discrete Dopants inside Source/Drain Extensions / Sung, Wen-Li;Li, Yiming
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