Statistical Device Simulation of Characteristic Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFETs Induced by Various Discrete Random Dopants

Abstract

We study the impact of random dopant fluctuation (RDF) on electrical characteristics of 10-nm-gatehigh kappa/metal gate gate-all-around silicon nanowire MOSFET devices. To provide the best accuracy of device simulation, model parameters are validated by using full quantum mechanical simulation and calibrated with experimental results. Physical mechanism of RDs inside channel and penetration from the source/drain extensions into the channel is discussed. Electrical characteristic of the device is estimated with respect to different types of RDF.