標題: Heterogeneously Integrated InP Based 14,vanescentlyCoupled High-Speed and High-Power p-i-n Photodiodes on Silicon-on-Insulator (SOI) Substrate
作者: Hulme, Jared
Kennedy, M. J.
Chao, Rui-Lin
Komljenovic, Tin
Shi, Jin-Wei
Bowers, J. E.
光電工程學系
Department of Photonics
公開日期: 2016
摘要: we demonstrate InP based evanescently-coupled pi-n photodiodes heterogeneously integrated onto silicon-on insulator substrate. Using advanced waveguide structures and fabrication processes, it simultaneously achieves 67 GHz O-E bandwidth (RC-free), broad optical window (1520-1600nm) with 0.5 A/W internal responsivity, and high saturation currents (9 mA at 70 GHz).
URI: http://hdl.handle.net/11536/134659
ISBN: 978-1-5090-1602-0
期刊: 2016 IEEE INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS (MWP)
起始頁: 233
結束頁: 236
Appears in Collections:Conferences Paper