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dc.contributor.authorChen, Yung-Yuen_US
dc.contributor.authorHsieh, Chih-Renen_US
dc.contributor.authorLu, Kwung-Wenen_US
dc.contributor.authorLou, Jen-Chungen_US
dc.date.accessioned2017-04-21T06:49:39Z-
dc.date.available2017-04-21T06:49:39Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-4297-3en_US
dc.identifier.urihttp://dx.doi.org/10.1109/EDSSC.2009.5394289en_US
dc.identifier.urihttp://hdl.handle.net/11536/134927-
dc.description.abstractIn this paper, the reliabilities and insulating characteristics of the fluorinated hafnium oxide (HIO2) inter-poly dielectric (IPD) through fluorine ion implantation are studied for the first time. HfO2 IPD characteristics are strongly dependent on the fluorine implantation dosage. Due to the terminating dangling bonds and oxygen vacancies, reducing interface oxidation and smoothing interface roughness, optimized fluorinated HfO2 can be used to drastically improve the IPD reliabilities; consequently, this study concludes that fluorinated HfO2 IPD is suitable for mass production applications in the future stacked-gate flash memory technology.en_US
dc.language.isoen_USen_US
dc.subjectflash memoryen_US
dc.subjectfluorineen_US
dc.subjectHfO2en_US
dc.titleHfO2 Inter-Poly Dielectric Characteristics with Interface Fluorine Passivationen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/EDSSC.2009.5394289en_US
dc.identifier.journal2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009)en_US
dc.citation.spage233en_US
dc.citation.epage+en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000289818000059en_US
dc.citation.woscount0en_US
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