3D 65nm CMOS with 320 degrees C Microwave Dopant Activation

Abstract

For the first time, CMOS TFTs of 65nm channel length have been demonstrated by using a novel microwave dopant activation technique. A low temperature microwave anneal is. demonstrated and discussed in this study. We have successfully activated the poly-Si gate electrode and source/drain junctions, BF2 for p-MOS TFTs and P-31 for n-MOS TFTs at a low temperature of 320 degrees C without diffusion. The technology is promising for high performance and low cost upper layer nanometer-scale transistors as required by low temperature 3D-ICs fabrication.