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dc.contributor.authorYeh, SSen_US
dc.contributor.authorLin, JJen_US
dc.contributor.authorJing, XNen_US
dc.contributor.authorZhang, DLen_US
dc.date.accessioned2019-04-03T06:42:51Z-
dc.date.available2019-04-03T06:42:51Z-
dc.date.issued2005-07-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.72.024204en_US
dc.identifier.urihttp://hdl.handle.net/11536/13503-
dc.description.abstractWe have fabricated a series of Au56Pd44 thick films with a wide range of residual resistivity rho(0) varying from 40 to 280 mu Omega cm. The resistivities of these films were measured between 15 and 300 K. We found that at temperatures below about 0.1 theta(D) (theta(D) is the Debye temperature), the interference mechanism between the elastic electron scattering and electron-phonon scattering (the electron-phonon-impurity interference effect) contributes significantly to the measured resistivities. Our results support the current theoretical idea that this interference-mechanism-induced resistivity varies with rho(0)T(2), where T is the temperature. Similar observation has also been made in disordered, conducting transition-metal oxide IrO2 thick films.en_US
dc.language.isoen_USen_US
dc.titleElectron-phonon-impurity interference effect in disordered Au56Pd44 and IrO2 thick filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.72.024204en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume72en_US
dc.citation.issue2en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000230890100043en_US
dc.citation.woscount12en_US
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