On the Noise Performance of 80nm InAs/In0.7Ga0.3As HEMTs Using Gate Sinking Technology

Full metadata record

DC Field	Value	Language
dc.contributor.author	Hsu, Heng-Tung	en_US
dc.contributor.author	Kuo, Chien-, I	en_US
dc.contributor.author	Chang, Edward Yi	en_US
dc.date.accessioned	2017-04-21T06:48:56Z	-
dc.date.available	2017-04-21T06:48:56Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-4244-2641-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135075	-
dc.language.iso	en_US	en_US
dc.title	On the Noise Performance of 80nm InAs/In0.7Ga0.3As HEMTs Using Gate Sinking Technology	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5	en_US
dc.citation.spage	230	en_US
dc.citation.epage	233	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000274900900043	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper