標題: Improvement on the noise performance of InAs-based HEMTs with gate sinking technology
作者: Hsu, Heng-Tung
Kuo, Chien-I
Chang, Edward Y.
Kuo, Fang-Yao
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Buried gate;High-electron mobility transistor (HEMT);InAs;InGaAs
公開日期: 1-十一月-2010
摘要: Improvement on the RF and noise performance for 80 nm InAs/In(0.7)Ga(0.3)As high-electron mobility transistor (HEMT) through gate sinking technology is presented. After gate sinking at 250 degrees C for 3 min, the device exhibited a high transconductance of 1900 mS/mm at a drain bias of 0.5 V with 1066 mA/mm drain-source saturation current. A current-gain cutoff frequency (f(T)) of 113 GHz and a maximum oscillation frequency (f(max)) of 110 GHz were achieved at extremely low drain bias of 0.1 V. The 0.08 x 40 mu m(2) device with gate sinking demonstrated 0.82 dB minimum noise figure and 14 dB associated gain at 17 GHz with only 1.14 mW DC power consumption. Significant improvement in RF and noise performance was mainly attributed to the reduction of gate-to-channel distance together with the parasitic source resistance through gate sinking technology. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2010.02.012
http://hdl.handle.net/11536/31983
ISSN: 0167-9317
DOI: 10.1016/j.mee.2010.02.012
期刊: MICROELECTRONIC ENGINEERING
Volume: 87
Issue: 11
起始頁: 2253
結束頁: 2257
顯示於類別:期刊論文


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