標題: | A 2-bit/cell, maskless, self-aligned resistance memory with high thermal stability |
作者: | He, ChiaHua Lee, Ming-Daou Pan, Chen-Ling Lai, Erb-Kun Yao, Yeong-Der Hsieh, Kuang-Yeu Liu, Rich Lu, Chih-Yuan 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2007 |
摘要: | We report the first demonstration of a multilevel cell (MLC) resistance device using a self-aligned WO, film prepared by plasma oxidation. The 2-bit/cell operation is achieved by applying a series of 1.5V programming pulses. The device shows high thermal stability and good data retention. The resistance change can be attributed to variable-range hopping and Ohmic transport mechanisms. This device has the potential for future low-voltage, 3-dimentioanl nonvolatile memory with multiple bits per layer. In addition, no additional mask is needed to form the self-aligned device. |
URI: | http://hdl.handle.net/11536/135149 |
ISBN: | 978-1-4244-0584-8 |
期刊: | 2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS |
起始頁: | 98 |
結束頁: | + |
Appears in Collections: | Conferences Paper |