標題: Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs
作者: Wang, J. -S.
Chen, William P. N.
Shih, C. -H.
Lien, C.
Su, Pin
Sheu, Y. M.
Chao, Donald Y. -S.
Goto, K.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
URI: http://hdl.handle.net/11536/135150
ISBN: 978-1-4244-0584-8
期刊: 2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS
起始頁: 158
結束頁: +
Appears in Collections:Conferences Paper