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dc.contributor.authorLiu, Chienen_US
dc.contributor.authorChen, Ping-Guangen_US
dc.contributor.authorXie, Meng-Jieen_US
dc.contributor.authorLiu, Shao-Nongen_US
dc.contributor.authorLee, Jun-Weien_US
dc.contributor.authorHuang, Shao-Jiaen_US
dc.contributor.authorLiu, Sallyen_US
dc.contributor.authorChen, Yu-Shengen_US
dc.contributor.authorLee, Heng-Yuanen_US
dc.contributor.authorLiao, Ming-Hanen_US
dc.contributor.authorChen, Pang-Shiuen_US
dc.contributor.authorLee, Min-Hungen_US
dc.date.accessioned2017-04-21T06:48:58Z-
dc.date.available2017-04-21T06:48:58Z-
dc.date.issued2016-04en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.55.04EB08en_US
dc.identifier.urihttp://hdl.handle.net/11536/135179-
dc.description.abstractThe concept of ferroelectric (FE) negative capacitance (NC) may be a turning point in overcoming the physical limitations imposed by the Boltzmann tyranny to realize next-generation state-of-the-art devices. Both the body factor (m-factor) and the transport mechanism (n-factor) are simultaneously improved by integrating an NC with a tunnel FET (TFET). The modeling approach is discussed in this study as well as the NC physics. By optimizing the thicknesses of FE, semiconductor, and interfacial layers, the capacitance of the FE layers is modulated to match that of a MOS resulting in the smallest subthreshold swing that is also hysteresis-free. An ultrathin-body double gate tunnel FET (UTB-DG-TFET) exhibits a steep slope (a subthreshold swing below 10 mV/dec over more than 4 orders of magnitude) for low-power applications (<0.2V switching voltage) to realize next-generation state-of-the-art devices. (C) 2016 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleSimulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stacken_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.7567/JJAP.55.04EB08en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume55en_US
dc.citation.issue4en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000373929400017en_US
dc.citation.woscount1en_US
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