標題: Investigation of charge loss in cycled NBit cells via field and temperature accelerations
作者: Tsai, W. J.
Zous, N. K.
Chen, H. Y.
Liu, Lenvis
Yeh, C. C.
Chen, Sam
Lu, W. P.
Wang, Tahui
Ku, Joseph
Lu, Chih-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2006
摘要: In nitride storage flash memories, the high-V-T state retention loss induced by field and temperature acceleration is compared between single cells and products. Our result reveals that the charge loss path is the same no matter which accelerating methods is used. The traps created at the bottom oxide during P/E cycling provide such leak paths. In addition, the annealing of interface states would play a role in the V-T loss during high-temperature bake.
URI: http://dx.doi.org/10.1109/RELPHY.2006.251328
http://hdl.handle.net/11536/135208
ISBN: 0-7803-9498-4
ISSN: 1541-7026
DOI: 10.1109/RELPHY.2006.251328
期刊: 2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL
起始頁: 693
結束頁: +
Appears in Collections:Conferences Paper