High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference

標題:	High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference
作者:	Wu, C. H. Hung, B. F. Chin, Albert Wang, S. J. Chen, W. J. Wang, X. P. Li, M. -F. Zhu, C. Jin, Y. Tao, H. J. Chen, S. C. Liang, M. S. 奈米科技中心 Center for Nanoscience and Technology
公開日期:	2006
摘要:	We report novel 1000 degrees C-stable [Ir3Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good phi(m.eff) of 5.08 and 4.24 eV, low V, of -0.10 and 0.18 V, high mobility of 84 and 217 cm(2)/Vs at 1.6 nm EOT, and small 850 degrees C BTI < 20 mV (10 MV/cm for 1 hr) are measured.
URI:	http://hdl.handle.net/11536/135214
ISBN:	978-1-4244-0438-4
期刊:	2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2
起始頁:	358
結束頁:	+
Appears in Collections:	Conferences Paper