Novel BEOL InGaZnO R-load-Type Logic-Gate Technology

標題:	Novel BEOL InGaZnO R-load-Type Logic-Gate Technology
作者:	Chan, Chin-Wen Lin, Horng-Chih Huang, Tiao-Yuan 電機學院電子工程學系及電子研究所 College of Electrical and Computer Engineering Department of Electronics Engineering and Institute of Electronics
公開日期:	2014
摘要:	N-channel InGaZnO (IGZO) inverters with a resistor-load were fabricated with film-profile engineering (FPE). In this scheme the profiles of the deposition films contained in the device are tailored to adjust its operation characteristics. The fabricated drive thin-film transistors (TFTs) show steep subthreshold swing (88 mV/dec) and high on/off current ratio (> 10(8)). Functional operation of the inverters is demonstrated with this simple scheme.
URI:	http://hdl.handle.net/11536/135336
ISBN:	978-1-4799-5677-7
ISSN:	2161-4636
期刊:	2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)
Appears in Collections:	Conferences Paper