标题: | Low noise RF MOSFETs on flexible plastic substrates |
作者: | Kao, HL Chin, A Hung, BF Lee, CF Lai, JM McAlister, SP Sarnudra, GS Yoo, WJ Chi, CC 奈米科技中心 Center for Nanoscience and Technology |
关键字: | associated gain;MOSFET;plastic;RF noise |
公开日期: | 1-七月-2005 |
摘要: | We report a low minimum noise figure (NFmin) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-mu m RF MOSFETs, after thinning down the Si substrate to 30 mu m and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NFmin to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-mu m node (L-g = 80 nm) devices. |
URI: | http://dx.doi.org/10.1109/LED.2005.851238 http://hdl.handle.net/11536/13533 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2005.851238 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 26 |
Issue: | 7 |
起始页: | 489 |
结束页: | 491 |
显示于类别: | Articles |
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