完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Yi-Da | en_US |
dc.contributor.author | Lin, Jian-Yuan | en_US |
dc.contributor.author | Wang, Chun-Kai | en_US |
dc.contributor.author | Fan, Long-Sheng | en_US |
dc.contributor.author | Wen, Kuei-Ann | en_US |
dc.date.accessioned | 2017-04-21T06:49:55Z | - |
dc.date.available | 2017-04-21T06:49:55Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.isbn | 978-1-4577-1766-6 | en_US |
dc.identifier.isbn | 978-1-4577-1765-9 | en_US |
dc.identifier.issn | 1930-0395 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/135461 | - |
dc.description.abstract | A monolithic capacitance accelerometer is fabricated in 0.18 mu m ASIC-compatible CMOS MEMS technology and, with the assistant of universal sensing system being developed in the proposed work. The new approach combines the Dual-Chopper amplifier and Correlated Double Sampling to alleviate 1/f noise and DC offset. The total noise equivalent acceleration is 13.49ug/root Hz under 500 Hz. The tunable sensitivity can be adjusted from 324.8 mV/fF to 17807.11mV/fF (differential mode) by the fully-differential variable gain amplifier (VGA). | en_US |
dc.language.iso | en_US | en_US |
dc.title | A Monolithic CMOS MEMS Accelerometer with Low Noise Gain Tunable Interface in 0.18 mu m CMOS MEMS Technology | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2012 IEEE SENSORS PROCEEDINGS | en_US |
dc.citation.spage | 1332 | en_US |
dc.citation.epage | 1335 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.identifier.wosnumber | WOS:000315671100326 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |