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dc.contributor.authorLin, Yi-Daen_US
dc.contributor.authorLin, Jian-Yuanen_US
dc.contributor.authorWang, Chun-Kaien_US
dc.contributor.authorFan, Long-Shengen_US
dc.contributor.authorWen, Kuei-Annen_US
dc.date.accessioned2017-04-21T06:49:55Z-
dc.date.available2017-04-21T06:49:55Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4577-1766-6en_US
dc.identifier.isbn978-1-4577-1765-9en_US
dc.identifier.issn1930-0395en_US
dc.identifier.urihttp://hdl.handle.net/11536/135461-
dc.description.abstractA monolithic capacitance accelerometer is fabricated in 0.18 mu m ASIC-compatible CMOS MEMS technology and, with the assistant of universal sensing system being developed in the proposed work. The new approach combines the Dual-Chopper amplifier and Correlated Double Sampling to alleviate 1/f noise and DC offset. The total noise equivalent acceleration is 13.49ug/root Hz under 500 Hz. The tunable sensitivity can be adjusted from 324.8 mV/fF to 17807.11mV/fF (differential mode) by the fully-differential variable gain amplifier (VGA).en_US
dc.language.isoen_USen_US
dc.titleA Monolithic CMOS MEMS Accelerometer with Low Noise Gain Tunable Interface in 0.18 mu m CMOS MEMS Technologyen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 IEEE SENSORS PROCEEDINGSen_US
dc.citation.spage1332en_US
dc.citation.epage1335en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000315671100326en_US
dc.citation.woscount0en_US
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