標題: N2O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
作者: Jhu, Jhe-Ciou
Chang, Ting-Chang
Chang, Geng-Wei
Syu, Yong-En
Tsai, Tsung-Ming
Jian, Fu-Yen
Chang, Kuan-Chang
Tai, Ya-Hsiang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2012
摘要: Abnormal sub-threshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). To confirm this phenomenon\'s dependence on the defects of a-IGZO active layer, this paper examines a device fabricated with N2O plasma treatment at a-IGZO film. This phenomenon only appears in the as-fabricated device, but not in the device with N2O plasma treatment, which is experimentally verified. N2O plasma treatment of a-IGZO TFTs enhance the thin film bonding strength, which could suppress the formation of temperature-dependent point defects. The point defects could be generated from oxygen atoms leaving their original sites above 400K. The N2O plasma treatment devices have better stability performance than as-fabricated devices. The results suggested that the density of point states for a-IGZO TFTs with N2O plasma treatment is much lower than that as-fabricated. The N2O plasma repairs the point defect to suppress temperature-dependent sub-threshold leakage current.
URI: http://dx.doi.org/10.1149/1.3701537
http://hdl.handle.net/11536/135464
ISBN: 978-1-60768-317-9
978-1-56677-959-3
ISSN: 1938-5862
DOI: 10.1149/1.3701537
期刊: WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 13
Volume: 45
Issue: 7
起始頁: 169
結束頁: 178
Appears in Collections:Conferences Paper