標題: The effect of thermal annealing on the properties of IGZO TFT prepared by atmospheric pressure plasma jet
作者: Wu, Chien-Hung
Chang, Kow-Ming
Huang, Sung-Hung
Deng, I-Chung
Wu, Chin-Jyi
Chiang, Wei-Han
Lin, Je-Wei
Chang, Chia-Chiang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2012
摘要: We fabricated bottom gate TFTs with IGZO channel layer deposited by atmospheric pressure plasma jet (APPJ). The effect of thermal annealing on the properties of IGZO TFTs was studied. After post annealing, the IGZO thin films showed a smooth and dense structure. The transistors annealed at 300 degrees C showed clear switching behavior with a negative threshold voltage of -0.571 V and a mobility of 2.6 cm(2)/V-s. After 500 degrees C post annealing, IGZO thin film showed an amorphous-like phase and the average transmittance is more than 80% in the visible range. Good electrical characteristics were achieved, including a threshold voltage of 6.74V, a subthreshold swing of 1.54 V/dec, a mobility of 10.31 cm(2)/V-s and a large I-on/I-off ratio of 3.28x10(8).
URI: http://dx.doi.org/10.1149/1.3701539
http://hdl.handle.net/11536/135465
ISBN: 978-1-60768-317-9
978-1-56677-959-3
ISSN: 1938-5862
DOI: 10.1149/1.3701539
期刊: WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 13
Volume: 45
Issue: 7
起始頁: 189
結束頁: 197
Appears in Collections:Conferences Paper