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dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorCho, Ta-Chunen_US
dc.contributor.authorSung, Po-Jungen_US
dc.contributor.authorKao, Kuo-Hsingen_US
dc.contributor.authorHsueh, Fu-Kuoen_US
dc.contributor.authorHou, Fu-Juen_US
dc.contributor.authorChen, Po-Chengen_US
dc.contributor.authorChen, Hsiu-Chihen_US
dc.contributor.authorWu, Chien-Tingen_US
dc.contributor.authorHsu, Shu-Hanen_US
dc.contributor.authorChen, Yi-Juen_US
dc.contributor.authorHuang, Yao-Mingen_US
dc.contributor.authorHou, Yun-Fangen_US
dc.contributor.authorHuang, Wen-Hsienen_US
dc.contributor.authorYang, Chih-Chaoen_US
dc.contributor.authorChen, Bo-Yuanen_US
dc.contributor.authorLin, Kun-Linen_US
dc.contributor.authorChen, Min-Chengen_US
dc.contributor.authorShen, Chang-Hongen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.contributor.authorHuang, Kun-Pingen_US
dc.contributor.authorCurrent, Michael I.en_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorSamukawa, Seijien_US
dc.contributor.authorWu, Wen-Faen_US
dc.contributor.authorShieh, Jia-Minen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorYeh, Wen-Kuanen_US
dc.date.accessioned2017-04-21T06:48:19Z-
dc.date.available2017-04-21T06:48:19Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4673-9894-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/136037-
dc.description.abstractA junctionless (JL) fin thin film transistor (FinTFT) with a novel shell doping profile (SDP) formed by a damage-free conformal molecular monolayer doping (MLD) method and a combination of microwave annealing (MWA) and CO2 laser spike annealing (COLSA) is demonstrated and studied. MWA drives in and partially activates the MLD dopants; the resultant SDP features an ultra-shallow depth (< 5nm) and an abrupt steepness (< 0.8 nm/dec). The dopant activation of the devices experienced MLD and MWA is further enhanced by the nonmelting COLSA without dopant diffusion, and which can also avoid fin deformation and recover surface defects left by fin patterning. Thanks to the enhanced dopant activation by COLSA, the SDP-FinTFTs overall exhibit better performance than the SDP-FinTFTs without COLSA and the conventional implanted (imp) FinTFTs in terms of subthreshold swing (S.S.), on-currents (I-on by 160% compared to the SDP-FinTFTs without COLSA) and on/off current ratio (I-on/I-off > 10(7)) for 3D stacked ICs applications. Our results reveal the potential of the proposed SDP formed by MLD, MWA and COLSA enabling a JLFinTFT showing excellent performance.en_US
dc.language.isoen_USen_US
dc.titleHigh Performance Poly Si Junctionless Transistors with Sub-5nm Conformally Doped Layers by Molecular Monolayer Doping and Microwave Incorporating CO2 Laser Annealing for 3D Stacked ICs Applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電機學院zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000380472500032en_US
dc.citation.woscount0en_US
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