標題: Reliability Analysis of Amorphous Silicon Thin-Film Transistors during Accelerated ESD Stress
作者: Tsai, Jung-Ruey
Wen, Ting-Ting
Yang, Shao-Ming
Sheu, Gene
Chang, Ruey-Dar
Syu, Yi-Jhen
Liu, Chin-Ping
Chang, Hsiu-Fu
Wei, Zhao-Hui
奈米中心
Nano Facility Center
公開日期: 2015
摘要: This work investigates the degradation of electrical characteristics of amorphous silicon thin-film transistors during the accelerated ESD stress with a 40V high voltage and a high/low current of 2 mA/0.1 mu A conditions. Both the leakage current and the threshold voltage shift are severe as the accelerated ESD stress applied at the gate region. The 40V accelerated ESD stress with a high current has more severe impact on the electrical performance of device than that with a low current.
URI: http://hdl.handle.net/11536/136101
ISBN: 978-1-4799-9928-6
ISSN: 1946-1550
期刊: PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)
起始頁: 286
結束頁: 289
顯示於類別:會議論文