Study on Transparent Amorphous Indium Oxide Thin Film Transistors Technology

标题:	Study on Transparent Amorphous Indium Oxide Thin Film Transistors Technology
作者:	Chang, Chih-Hsiang Lai, Yu-Chia Fan, Yang-Shun Chang, Che-Chia Liu, Po-Tsun 电子工程学系及电子研究所光电工程学系显示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display
公开日期:	2015
摘要:	In this study, we analyzed the In2O3 thin flints with different oxygen How rate during sputtering as the transistor\'s channel layer. The electrical analysis including device\'s reliability and material analysis were both examined.
URI:	http://hdl.handle.net/11536/136105
ISBN:	978-1-4799-9928-6
ISSN:	1946-1550
期刊:	PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)
起始页:	374
结束页:	378
显示于类别：	Conferences Paper

APA	Chang, C., Lai, Y., Fan, Y., Chang, C., & Liu, P. (2015). Study on Transparent Amorphous Indium Oxide Thin Film Transistors Technology. WOS:000380466200095.
Bibtex	@article{Chang2015Study, title={Study on Transparent Amorphous Indium Oxide Thin Film Transistors Technology}, author={Chang, Chih-Hsiang and Lai, Yu-Chia and Fan, Yang-Shun and Chang, Che-Chia and Liu, Po-Tsun}, journal={WOS:000380466200095}, year={2015}, url={https://ir.lib.nycu.edu.tw/handle/11536/136105?locale=zh_CN}, }