Fabrication and Reliability Investigation of Copper Pillar and Tapered Through Silicon Via (TSV) for Direct Bonding in 3D Integration

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, Yu-Wei	en_US
dc.contributor.author	Chen, Kuan-Neng	en_US
dc.date.accessioned	2017-04-21T06:49:50Z	-
dc.date.available	2017-04-21T06:49:50Z	-
dc.date.issued	2015	en_US
dc.identifier.isbn	978-1-4799-9928-6	en_US
dc.identifier.issn	1946-1550	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136113	-
dc.description.abstract	Compare to the conventional structure, in this research, the structure of Cu pillar and tapered TSV for direct bonding has an excellent potential for low bonding temperature within a short bonding time. In addition, this scheme has the advantage of self-alignment ability. This paper focuses on the fabrication of taper-shape of through silicon via (TSV) and reports the quality and reliability investigation of bonding results.	en_US
dc.language.iso	en_US	en_US
dc.title	Fabrication and Reliability Investigation of Copper Pillar and Tapered Through Silicon Via (TSV) for Direct Bonding in 3D Integration	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)	en_US
dc.citation.spage	439	en_US
dc.citation.epage	442	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000380466200112	en_US
dc.citation.woscount	0	en_US
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