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dc.contributor.authorTsai, Hui-Wenen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2017-04-21T06:49:51Z-
dc.date.available2017-04-21T06:49:51Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4799-9928-6en_US
dc.identifier.issn1946-1550en_US
dc.identifier.urihttp://hdl.handle.net/11536/136115-
dc.description.abstractA concept of active guard ring and its corresponding circuit solution to enhance the latch-up immunity of integrated circuits (IC) are proposed and verified in a 0.6-um 5-V CMOS process. By detecting the over-shooting/under-shooting trigger current during latchup current test (I-test), some compensation current generated from on-chip ESD PMOS or NMOS devices through special circuit design can effectively reduce the latchup trigger current that injecting into the core circuit blocks. Therefore, the latchup immunity of I-test with positive or negative trigger current applied at the I/O pins can be significantly improved.en_US
dc.language.isoen_USen_US
dc.titleImprove Latch-up Immunity by Circuit Solutionen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)en_US
dc.citation.spage527en_US
dc.citation.epage530en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000380466200135en_US
dc.citation.woscount0en_US
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