標題: | Active Guard Ring to Improve Latch-Up Immunity |
作者: | Tsai, Hui-Wen Ker, Ming-Dou 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Electrostatic discharge (ESD) protection;guard ring;latchup |
公開日期: | 1-十二月-2014 |
摘要: | A new design concept named as active guard ring and related circuit implementation to improve the latch-up immunity of ICs are proposed. Using additional sensing circuit and active buffer to turn ON the electrostatic discharge (ESD) protection transistors, the large-dimensional ESD (or I/O) devices can provide or receive extra compensation current to the negative or positive current perturbation during the latch-up current test. The new proposed solution has been verified in 0.6-mu m 5 V process to have much higher latch-up resistance compared with the conventional prevention method of guard ring in CMOS technology. |
URI: | http://dx.doi.org/10.1109/TED.2014.2363171 http://hdl.handle.net/11536/124102 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2014.2363171 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 61 |
Issue: | 12 |
起始頁: | 4145 |
結束頁: | 4152 |
顯示於類別: | 期刊論文 |