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dc.contributor.authorKer, MDen_US
dc.contributor.authorHsu, KCen_US
dc.date.accessioned2014-12-08T15:18:55Z-
dc.date.available2014-12-08T15:18:55Z-
dc.date.issued2005-06-01en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TDMR.2005.846824en_US
dc.identifier.urihttp://hdl.handle.net/11536/13611-
dc.description.abstractAn overview on the electrostatic discharge (ESD) protection circuits by using the silicon controlled rectifier (SCR)-based devices in CMOS ICs is presented. The history and evolution of SCR device used for on-chip ESD protection is introduced. Moreover, two practical problems (higher switching voltage and transient-induced latchup issue) limiting the use of SCR-based devices in on-chip ESD protection are reported. Some modified device structures and trigger-assist circuit techniques to reduce the switching voltage of SCR-based devices are discussed. The solutions to overcome latchup issue in the SCR-based devices are also discussed to safely apply the SCR-based devices for on-chip ESD protection in CMOS IC products.en_US
dc.language.isoen_USen_US
dc.subjectelectrostatic discharge (ESD)en_US
dc.subjectESD protection circuitsen_US
dc.subjectlatchupen_US
dc.subjectsilicon controlled rectifier (SCR)en_US
dc.titleOverview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuitsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TDMR.2005.846824en_US
dc.identifier.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITYen_US
dc.citation.volume5en_US
dc.citation.issue2en_US
dc.citation.spage235en_US
dc.citation.epage249en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000230223000012-
dc.citation.woscount55-
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