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dc.contributor.authorChang, Chia-Haoen_US
dc.contributor.authorLi, Zong-Linen_US
dc.contributor.authorLu, Hong-Tingen_US
dc.contributor.authorLee, Chien-Pingen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.date.accessioned2017-04-21T06:49:15Z-
dc.date.available2017-04-21T06:49:15Z-
dc.date.issued2014en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/136151-
dc.description.abstractThe mid-infrared electrically-driven laser using InGaAs/GaAsSb \'W\'-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 mu m with the lowest threshold current density of 1.42 kA/cm(2) is presented.en_US
dc.language.isoen_USen_US
dc.titleLow-threshold InGaAs/GaAsSb \'W\'-type quantum well laser on InP substrateen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.contributor.department電機學院zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000369908602471en_US
dc.citation.woscount0en_US
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