標題: The Process and Stress-Induced Variability Issues of Trigate CMOS Devices
作者: Chung, Steve S.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Trigate CMOS;Variability;Variation;Reliability
公開日期: 2013
摘要: Not only the popular random dopant fluctuation (RDF), but also the traps, caused by the hot carrier stress induce the V-th variations. This paper will address the importance of these effects and the experimental demonstration of the process-and trap-induced fluctuations. The boron clustering, sidewall roughness, and the electrical stress effects can all be justified by the theory and the method. This method provides us a valuable tool for the understanding of the process and stress induced variability in 3D devices (e.g., FinFET).
URI: http://hdl.handle.net/11536/136158
ISBN: 978-1-4673-2523-3
期刊: 2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
Appears in Collections:Conferences Paper