Flexible InGaZnO TFTs with Stacked GeO2/TiO2 Gate Dielectrics

標題:	Flexible InGaZnO TFTs with Stacked GeO2/TiO2 Gate Dielectrics
作者:	Hsu, Hsiao-Hsuan Chang, Chun-Yen Cheng, Chun-Hu Yu, Shu-Hung Su, Ching-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	thin film transistor (TFT);flexible;GeO2;TiO2
公開日期:	2013
摘要:	We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm(2)/Vs, and a good I-on/I-off ratio of 3.7x10(5). The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-kappa TiO2.
URI:	http://hdl.handle.net/11536/136159
ISBN:	978-1-4673-2523-3
期刊:	2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
Appears in Collections:	Conferences Paper