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dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorYu, Shu-Hungen_US
dc.contributor.authorSu, Ching-Yuanen_US
dc.date.accessioned2017-04-21T06:50:00Z-
dc.date.available2017-04-21T06:50:00Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4673-2523-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/136159-
dc.description.abstractWe reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm(2)/Vs, and a good I-on/I-off ratio of 3.7x10(5). The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-kappa TiO2.en_US
dc.language.isoen_USen_US
dc.subjectthin film transistor (TFT)en_US
dc.subjectflexibleen_US
dc.subjectGeO2en_US
dc.subjectTiO2en_US
dc.titleFlexible InGaZnO TFTs with Stacked GeO2/TiO2 Gate Dielectricsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000380585600187en_US
dc.citation.woscount0en_US
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