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dc.contributor.authorLin, Chien-Chenen_US
dc.contributor.authorHung, Jui-Yuen_US
dc.contributor.authorLin, Wen-Zhangen_US
dc.contributor.authorLo, Chieh-Puen_US
dc.contributor.authorChiang, Yen-Ningen_US
dc.contributor.authorTsai, Hsiang-Jenen_US
dc.contributor.authorYang, Geng-Hauen_US
dc.contributor.authorKing, Ya-Chinen_US
dc.contributor.authorLin, Chrong Jungen_US
dc.contributor.authorChen, Tien-Fuen_US
dc.contributor.authorChang, Meng-Fanen_US
dc.date.accessioned2017-04-21T06:49:55Z-
dc.date.available2017-04-21T06:49:55Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-4673-9467-3en_US
dc.identifier.issn0193-6530en_US
dc.identifier.urihttp://hdl.handle.net/11536/136198-
dc.language.isoen_USen_US
dc.titleA 256b-Wordlength ReRAM-based TCAM with 1ns Search-Time and 14x Improvement in WordLength-EnergyEfficiency-Density Product using 2.5T1R cellen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)en_US
dc.citation.volume59en_US
dc.citation.spage136en_US
dc.citation.epageU182en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000382151400050en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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