A 256b-Wordlength ReRAM-based TCAM with 1ns Search-Time and 14x Improvement in WordLength-EnergyEfficiency-Density Product using 2.5T1R cell

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Chien-Chen	en_US
dc.contributor.author	Hung, Jui-Yu	en_US
dc.contributor.author	Lin, Wen-Zhang	en_US
dc.contributor.author	Lo, Chieh-Pu	en_US
dc.contributor.author	Chiang, Yen-Ning	en_US
dc.contributor.author	Tsai, Hsiang-Jen	en_US
dc.contributor.author	Yang, Geng-Hau	en_US
dc.contributor.author	King, Ya-Chin	en_US
dc.contributor.author	Lin, Chrong Jung	en_US
dc.contributor.author	Chen, Tien-Fu	en_US
dc.contributor.author	Chang, Meng-Fan	en_US
dc.date.accessioned	2017-04-21T06:49:55Z	-
dc.date.available	2017-04-21T06:49:55Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-4673-9467-3	en_US
dc.identifier.issn	0193-6530	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136198	-
dc.language.iso	en_US	en_US
dc.title	A 256b-Wordlength ReRAM-based TCAM with 1ns Search-Time and 14x Improvement in WordLength-EnergyEfficiency-Density Product using 2.5T1R cell	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)	en_US
dc.citation.volume	59	en_US
dc.citation.spage	136	en_US
dc.citation.epage	U182	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.identifier.wosnumber	WOS:000382151400050	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文