完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Chien-Chen | en_US |
dc.contributor.author | Hung, Jui-Yu | en_US |
dc.contributor.author | Lin, Wen-Zhang | en_US |
dc.contributor.author | Lo, Chieh-Pu | en_US |
dc.contributor.author | Chiang, Yen-Ning | en_US |
dc.contributor.author | Tsai, Hsiang-Jen | en_US |
dc.contributor.author | Yang, Geng-Hau | en_US |
dc.contributor.author | King, Ya-Chin | en_US |
dc.contributor.author | Lin, Chrong Jung | en_US |
dc.contributor.author | Chen, Tien-Fu | en_US |
dc.contributor.author | Chang, Meng-Fan | en_US |
dc.date.accessioned | 2017-04-21T06:49:55Z | - |
dc.date.available | 2017-04-21T06:49:55Z | - |
dc.date.issued | 2016 | en_US |
dc.identifier.isbn | 978-1-4673-9467-3 | en_US |
dc.identifier.issn | 0193-6530 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/136198 | - |
dc.language.iso | en_US | en_US |
dc.title | A 256b-Wordlength ReRAM-based TCAM with 1ns Search-Time and 14x Improvement in WordLength-EnergyEfficiency-Density Product using 2.5T1R cell | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2016 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC) | en_US |
dc.citation.volume | 59 | en_US |
dc.citation.spage | 136 | en_US |
dc.citation.epage | U182 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.identifier.wosnumber | WOS:000382151400050 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |