標題: Excellent Resistance Variability Control of WOx ReRAM by a Smart Writing Algorithm
作者: Lin, Yu-Hsuan
Wu, Jau-Yi
Lee, Ming-Hsiu
Wang, Tien-Yen
Lin, Yu-Yu
Lee, Feng-Ming
Lee, Dai-Ying
Lai, Erh-Kun
Chiang, Kuang-Hao
Lung, Hsiang-Lan
Hsieh, Kuang-Yeu
Tseng, Tseung-Yuen
Lu, Chih-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2016
摘要: TMO ReRAMs, being built on defect states, are intrinsically subject to variability. In this work, cell to cell variability is studied by applying write shots with different current and voltage for Forming, SET and RESET operation, respectively. We found the keys to eliminate tail bits consist of (1) longer write pulse, (2) higher write current and (3) higher write voltage. In order to optimize the performance of write speed, write power and device reliability, we developed a novel resistance control method using a smart writing algorithm. Compared to the conventional ISPP writing scheme, this smart writing algorithm covers much wider switching condition variability and cell-to-cell variation by controlling both current and voltage for ReRAM operation.
URI: http://hdl.handle.net/11536/136432
ISBN: 978-1-4673-9478-9
ISSN: 1930-8868
期刊: 2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
Appears in Collections:Conferences Paper