Interface Study of Metal-Semiconductor Systems

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DC Field	Value	Language
dc.contributor.author	張俊彥	zh_TW
dc.contributor.author	施敏	zh_TW
dc.contributor.author	C.Y.Chang	en_US
dc.contributor.author	S.M.Sze	en_US
dc.date.accessioned	2017-10-06T06:17:46Z	-
dc.date.available	2017-10-06T06:17:46Z	-
dc.date.issued	1969-04	en_US
dc.identifier.uri	http://hdl.handle.net/11536/137445	-
dc.description.abstract	Interface effect and carrier transport in metal-semiconductor systems have been studied theoretically and experimentally to give a generalized and quantitative presentation. The	en_US
dc.language.iso	en_US	en_US
dc.publisher	交大學刊編輯委員會	zh_TW
dc.title	Interface Study of Metal-Semiconductor Systems	en_US
dc.type	Campus Publications	en_US
dc.identifier.journal	交大學刊	zh_TW
dc.identifier.journal	SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY	en_US
dc.citation.volume	3	en_US
dc.citation.issue	2	en_US
dc.citation.spage	33	en_US
dc.citation.epage	64	en_US
Appears in Collections:	Science Bulletin National Chiao-Tung University

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