標題: | Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface |
作者: | Huang, HW Kao, CC Chu, JI Kuo, HC Wang, SC Yu, CC 光電工程學系 Department of Photonics |
關鍵字: | gallium nitride (GaN);light-emitting diode (LED);nano-mask;nickel |
公開日期: | 1-May-2005 |
摘要: | This investigation describes the development of InGaN-GaN light-emitting diode (LED) with a nano-roughened top p-GaN surface which uses Ni nano-mask and wet etching. The light output of the InGaN-GaN LED with a nano-roughened top p-GaN surface is 1.4 times that of a conventional LED, and wall-plug efficiency is 45% higher. The operating voltage of InGaN-GaN LED was reduced from 3.65 to 3.5 V at 20 mA and the series resistance was reduced by 20%. The light output is increased by the nano-roughening of the top p-GaN surface. The reduction in the series resistance can be attributed to the increase in the contact area of nano-roughened surface. |
URI: | http://dx.doi.org/10.1109/LPT.2005.846741 http://hdl.handle.net/11536/13771 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2005.846741 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 17 |
Issue: | 5 |
起始頁: | 983 |
結束頁: | 985 |
Appears in Collections: | Articles |
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