二氧化鉿金屬橋樑電阻式記憶體之可靠度研究

Full metadata record

DC Field	Value	Language
dc.contributor.author	黃楚傑	zh_TW
dc.contributor.author	曾俊元	zh_TW
dc.contributor.author	Huang, Chu-Jie	en_US
dc.contributor.author	Tseng, Tseung-Yuen	en_US
dc.date.accessioned	2018-01-24T07:37:01Z	-
dc.date.available	2018-01-24T07:37:01Z	-
dc.date.issued	2016	en_US
dc.identifier.uri	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070350167	en_US
dc.identifier.uri	http://hdl.handle.net/11536/138887	-
dc.language.iso	en_US	en_US
dc.subject	二氧化鉿	zh_TW
dc.subject	金屬橋樑電阻式記憶體	zh_TW
dc.subject	Hafnium-Oxide	en_US
dc.subject	Conductive Bridge Random Access Memory	en_US
dc.title	二氧化鉿金屬橋樑電阻式記憶體之可靠度研究	zh_TW
dc.title	Reliability Improvement in HfO2-Based Conductive Bridge Random Access Memory	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子工程學系電子研究所	zh_TW
Appears in Collections:	Thesis