标题: 形成TFT结构之CVD成膜最佳电性均匀度的参数设定
The Optimal Parameter Setting for Improving the Uniformity of the Electric Characteristic of the CVD Process for Forming the TFT Structure
作者: 江宜洁
唐丽英
洪瑞云
Chiang, Yi-Chieh
Tong, Lee-Ing
Horng, Ruey-Yun
管理学院工业工程与管理学程
关键字: 薄膜电晶体阵列制程;电浆辅助化学气相沉积;良率;电性均匀度;田口方法;反应曲面法;TFT Array Process;Plasma Enhanced Vapor Deposition (PECVD);Yield;Electric characteristic uniformity;Taguchi Method;Response Surface Method(RSM)
公开日期: 2016
摘要: 本研究主要目的是针对TFT-LCD制造过程中,Array段的薄膜制程(Thin Film Process)中第二道的CVD制程进行最佳化。本研究首先藉由田口方法(Taguchi Method)来厘清CVD制程中重要参数的变动与TFT的电性变化间之关联性以找出影响电性均匀度的显着参数,再利用反应曲面法(Response Surface Method, RSM)找出使CVD成膜均匀性最佳的参数设定值。本研究最后利用台湾某LCD厂商的一个实例,以Array的良率及电性均匀度(Electric characteristic uniformity)来确认本研究所找出之CVD成膜参数设定值确实有效。
The main objective of this study is to improving the uniformity of the electric characteristic of CVD Process, which is the second thin film Process of Array in manufacturing TFT-LCD. The Taguchi method is utilized to clarify the relation between process Parameters and the electric characteristic of TFT and to find out the significant parameters of the CVD process. Then the optimal setting of these significant parameters are determined using Response Surface Method (RSM). Finally, a real case is utilized to verify the effectiveness of the proposed procedure for finding the optimal parameters setting to maximize the yield and enhance the electric characteristic.
URI: http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070363322
http://hdl.handle.net/11536/139466
显示于类别:Thesis