A novel program-erasable high-(K) A1N-Si MIS capacitor

Abstract

We demonstrate a programmable-erasable MIS capacitor with a single layer high-kappa AIN dielectric on Si having a high capacitance density of 5 fF/mum(2). It has low program and erase voltages of +4 and -4 V, respectively. Such an erase function is not available in other single layer Al2O3, AION, or other known high-kappa dielectric capacitors, where the threshold voltage (T h) shifts continuously with voltage. This device exhibits good data retention with a V-th change of only 0.06 V after 10 000 s.