A novel program-erasable high-(K) A1N-Si MIS capacitor

doi:10.1109/LED.2004.842100

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lai, CH	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Hung, BF	en_US
dc.contributor.author	Cheng, CF	en_US
dc.contributor.author	Yoo, WJ	en_US
dc.contributor.author	Li, MF	en_US
dc.contributor.author	Zhu, CX	en_US
dc.contributor.author	McAlister, SP	en_US
dc.contributor.author	Kwong, DL	en_US
dc.date.accessioned	2014-12-08T15:19:37Z	-
dc.date.available	2014-12-08T15:19:37Z	-
dc.date.issued	2005-03-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2004.842100	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13954	-
dc.description.abstract	We demonstrate a programmable-erasable MIS capacitor with a single layer high-kappa AIN dielectric on Si having a high capacitance density of 5 fF/mum(2). It has low program and erase voltages of +4 and -4 V, respectively. Such an erase function is not available in other single layer Al2O3, AION, or other known high-kappa dielectric capacitors, where the threshold voltage (T h) shifts continuously with voltage. This device exhibits good data retention with a V-th change of only 0.06 V after 10 000 s.	en_US
dc.language.iso	en_US	en_US
dc.subject	capacitor	en_US
dc.subject	erase	en_US
dc.subject	high-K	en_US
dc.subject	program	en_US
dc.title	A novel program-erasable high-(K) A1N-Si MIS capacitor	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2004.842100	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	26	en_US
dc.citation.issue	3	en_US
dc.citation.spage	148	en_US
dc.citation.epage	150	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000227262500008	-
dc.citation.woscount	12	-
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