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dc.contributor.authorYou, HCen_US
dc.contributor.authorKo, FHen_US
dc.contributor.authorLei, TFen_US
dc.date.accessioned2014-12-08T15:19:40Z-
dc.date.available2014-12-08T15:19:40Z-
dc.date.issued2005-03-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mee.2004.12.066en_US
dc.identifier.urihttp://hdl.handle.net/11536/13981-
dc.description.abstractThe fullerene molecules (i.e., C60 and C70) were incorporated in the SUMITOMO NEB-22 negative electron beam resist to investigate the lithographic and etching performances of the resist. The sensitivity, process window and contrast of the modified resist were found to be improved, while the dilution of resist degraded the sensitivity. The electron beam dose affected the designed line width, and the adulterated resist could print sub-50 nm pattern without the problem of line edge roughness. The etching selectivity of gas (CHF3/CF4) on silicon dioxide and resist, and gas (Cl-2/O-2) on poly-silicon and resist were evaluated. We found the small amount (0.01-0.02% w/v) of fullerene molecules very effectively promoted the etch resistance and selectivity. The fullerene-incorporated resist was used to pattern self-aligned metal silicides, and nickel silicide on poly-silicon exhibited lower sheet resistance. (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectfullerene moleculeen_US
dc.subjectelectron beam resisten_US
dc.subjectetchingen_US
dc.subjectmetal silicideen_US
dc.titleResist nano-modification technology for enhancing the lithography and etching performanceen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.mee.2004.12.066en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume78-79en_US
dc.citation.issueen_US
dc.citation.spage521en_US
dc.citation.epage527en_US
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000228589700086-
Appears in Collections:Conferences Paper


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