高效能氧化銦鎢薄膜電晶體元件研究與開發

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	張智翔	zh_TW
dc.contributor.author	劉柏村	zh_TW
dc.contributor.author	Chang, Chih-Hsiang	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.date.accessioned	2018-01-24T07:39:09Z	-
dc.date.available	2018-01-24T07:39:09Z	-
dc.date.issued	2017	en_US
dc.identifier.uri	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070180503	en_US
dc.identifier.uri	http://hdl.handle.net/11536/140370	-
dc.language.iso	zh_TW	en_US
dc.subject	薄膜電晶體	zh_TW
dc.subject	氧化銦鎢	zh_TW
dc.subject	背通道蝕刻	zh_TW
dc.subject	通道保護層	zh_TW
dc.subject	thin film transistors	en_US
dc.subject	indium tungsten oxide	en_US
dc.subject	back channel etching	en_US
dc.subject	channel passivation layer	en_US
dc.title	高效能氧化銦鎢薄膜電晶體元件研究與開發	zh_TW
dc.title	Investigation on High Performance Tungsten Oxide Doped Indium Oxide Semiconductor for Thin Film Transistors Application	en_US
dc.type	Thesis	en_US
dc.contributor.department	光電工程研究所	zh_TW
顯示於類別：	畢業論文