損耗電感對於單頻帶/雙頻帶/寬頻帶SiGe HBT低雜訊放大器之效應

Abstract

本論文主要探討了雙埠網路的雜訊參數表示法，並且使用雜訊相關矩陣以及輸入端參考雜訊源的方法求出元件的雜訊參數。接著，使用了雜訊轉換矩陣的方法將單頻帶、雙頻帶、寬頻帶架構低雜訊放大器的雜訊參數求出。最後，使用雜訊轉換矩陣的結果將低雜訊放大器設計出來。 本論文第一個部份使用文獻的方法求出元件的雙埠網路雜訊，並使用了雜訊相關矩陣，求出元件的雜訊參數型式。接下來，部份使用雜訊轉換矩陣將元件雜訊參數轉換成電路雜訊參數，並且根據匹配元件改變雜訊轉換矩陣的型式，將單頻帶、雙頻帶、寬頻帶架構低雜訊放大器之完整雜訊參數求出。 第二個部份，根據完整電路的雜訊參數帶入電晶體參數進行計算，將初步的低雜訊放大器設計出來，再依據損耗造成的影響調整元件值，最後完整電路的設計。在完成電路設計之後，觀察理想元件電路最低雜訊指數與實際有損耗元件電路最低雜訊指數，發現元件的損耗對於不同的電路有不同的影響，因此，我們透過這些影響找出設計單頻帶、雙頻帶、寬頻帶架構低雜訊放大器的流程。

This thesis discusses two-port networks and their noise parameter notations. At first, this study uses two ways to find out the bipolar device noise parameters, noise correlation matrix and input referred noise sources. Then, the noise parameters of inductively emitter-degenerated (IED) single-/dual-/broad-band low noise amplifiers (LNAs) using noise transformation matrix were established. Finally, the calculated results of noise transformation matrix were used as design guidelines to design LNAs. This thesis is divided into two parts. At the first part of this thesis, the methods in the literature were employed to find out the noise of device and find out the noise parameters of the device using noise correlation matrix. Then noise parameters of the LNA were obtained using noise transformation matrix. At the second part of this thesis, the precise noise parameters according to the real transistor parameters were employed to design a prototype LNA with the effect of inductor loss. The noise figure minima with ideal components and real components were compared to discover the effect of inductor loss. Based on these design experience, a design flow of IED single-/dual-/broad-band LNAs was established.