標題: Random Work Function Variation Induced Threshold Voltage Fluctuation in 16-nm Bulk FinFET Devices with High-kappa-Metal-Gate Material
作者: Cheng, Hui-Wen
Li, Yiming
傳播研究所
Institute of Communication Studies
關鍵字: Metal-gate;TiN;Random work function;Threshold voltage fluctuation;FinFET;Analytical expression;Modeling and simulation
公開日期: 2010
摘要: The random work-function (WK) induced threshold voltage fluctuation (sigma Vth) in 16-nm TiN metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced sigma Vth are studied analytically. The results of this study allow us to identify suitable materials for metal gate and to clarify reduction of the sigma Vth owing to WKF. Among four different gate materials, the titanium nitride possesses the smallest sigma Vth due to small size of metal grains.
URI: http://hdl.handle.net/11536/14344
http://dx.doi.org/10.1109/ICSESS.2010.5552445
ISBN: 978-1-4244-9384-5
DOI: 10.1109/ICSESS.2010.5552445
期刊: 2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010)
起始頁: 331
結束頁: 334
顯示於類別:會議論文