標題: Thermally Strained Band Gap Engineering of Transition-Metal Dichalcogenide Bilayers with Enhanced Light Matter Interaction toward Excellent Photodetectors
作者: Wang, Sheng-Wen
Medina, Henry
Hong, Kuo-Bin
Wu, Chun-Chia
Qu, Yindong
Manikandan, Arumugam
Su, Teng-Yu
Lee, Po-Tsung
Huang, Zhi-Quan
Wang, Zhiming
Chuang, Feng-Chuan
Kuo, Hao-Chung
Chueh, Yu-Lun
光電工程學系
Department of Photonics
關鍵字: chemical vapor deposition;transition-metal dichalcogenide;molybdenum disulfide;thermal strain;patterned sapphire substrate;photodetector
公開日期: 1-Sep-2017
摘要: Integration of strain engineering of two-dimensional (2D) materials in order to enhance device performance is still a challenge. Here, we successfully demonstrated the thermally strained band gap engineering of transition-metal dichalcogenide bilayers by different thermal expansion coefficients between 2D materials and patterned sapphire structures, where MoS2 bilayers were chosen as the demonstrated materials. In particular, a blue shift in the band gap of the MoS2 bilayers can be tunable, displaying an extraordinary capability to drive electrons toward the electrode under the smaller driven bias, and the results were confirmed by simulation. A model to explain the thermal strain in the MoS2 bilayers during the synthesis was proposed, which enables us to precisely predict the band gap-shifted behaviors on patterned sapphire structures with different angles. Furthermore, photodetectors with enhancement of 286% and 897% based on the strained MoS2 on cone and pyramid-patterned sapphire substrates were demonstrated, respectively.
URI: http://dx.doi.org/10.1021/acsnano.7b02444
http://hdl.handle.net/11536/143846
ISSN: 1936-0851
DOI: 10.1021/acsnano.7b02444
期刊: ACS NANO
Volume: 11
起始頁: 8768
結束頁: 8776
Appears in Collections:Articles