標題: | Investigating degradation behaviors induced by hot carriers in the etch stop layer in amorphous InGaZnO thin film transistors with different electrode materials and structures |
作者: | Yang, Chung-I Chang, Ting-Chang Chen, Bo-Wei Chou, Wu-Ching Liao, Po-Yung Lin, Sung-Chun Yeh, Cheng-Yen Chang, Chia-Sen Tsai, Cheng-Ming Yu, Ming-Chang 電子物理學系 Department of Electrophysics |
關鍵字: | Thin film transistor;Etching stop layer;Thermal field emission activation energy;Hot carrier effect;Reliability |
公開日期: | 31-十二月-2017 |
摘要: | This work investigates the hot carrier effect in via-contact type amorphous indium gallium zinc oxide thin film transistors with various source/drain materials and structures. According to previous research, the redundant drain electrode plays an important role in hot carrier stress-induced degradation, which leads to carrier-trapping in the etch stop layer between the active layer and the redundant drain electrode. Hot carrier stress has different influences on device characteristics, depending on materials and structure. Hot carrier stress causes more electron trapping in the etch stop layer below the redundant drain electrode in the presence of smaller source/drain metal work function or a longer redundant drain electrode. To further verify the mechanisms of the degradation behavior, the barrier height for Fowler-Nordheim-tunneling is extracted by a fitting charge trapping model. It is found that the barrier height for Fowler-Nordheim-tunneling is different for different source/drain materials. |
URI: | http://dx.doi.org/10.1016/j.tsf.2017.08.053 http://hdl.handle.net/11536/144116 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2017.08.053 |
期刊: | THIN SOLID FILMS |
Volume: | 644 |
起始頁: | 45 |
結束頁: | 51 |
顯示於類別: | 期刊論文 |