標題: Accurate performance evaluation of VLSI designs with selected CMOS process parameters
作者: Chang, Chia-Ling (Lynn)
Wen, Charles H. -P.
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: VLSI;CMOS integrated circuits;VLSI designs;selected CMOS process parameters;accurate performance evaluation;circuit behaviour;device-level models;circuit-level performance;dominant process parameters;ISCAS'85 benchmark circuits;ISCAS'89 benchmark circuits;IWLS'05 benchmark circuits;size 32 nm;size 45 nm
公開日期: 1-Jan-2018
摘要: As process monitors have become vital components in modern very-large-scale integration (VSLI) designs, performance targets often determine the physical implementation of such monitors. However, as various process and environmental parameters collectively affect circuit behaviour, the design of process monitors can be difficult. In addition, process parameters from device-level models may not provide sufficient resolution in circuit-level performance. Therefore, the authors propose an intelligent novel flow for selecting dominant process parameters for evaluating performance targets such as timing and leakage. The proposed flow is applied to ISCAS'85, ISCAS'89, and IWLS'05 benchmark circuits and selects the dominant parameters in 32 and 45nm complementary metal-oxide-semiconductor (CMOS) technologies. Through this flow, the authors identify the supply voltage, temperature, gate-oxide thickness, and effective gate length as the four dominant factors for timing and leakage. Experimental results show that the suggested process parameters achieve high evaluation accuracy (<3% errors in timing and <1% errors in leakage on average) in the benchmark circuits. Therefore, the proposed flow can select dominant parameters for performance targets, and the four determined factors can be used to accurately evaluate timing and leakage in 32 and 45nm CMOS technologies.
URI: http://dx.doi.org/10.1049/iet-cds.2017.0097
http://hdl.handle.net/11536/144332
ISSN: 1751-858X
DOI: 10.1049/iet-cds.2017.0097
期刊: IET CIRCUITS DEVICES & SYSTEMS
Volume: 12
起始頁: 116
結束頁: 123
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